Effect of growth parameters on the properties of GaN : Zn epilayers

@inproceedings{Jacob1977EffectOG,
  title={Effect of growth parameters on the properties of GaN : Zn epilayers},
  author={Guy Michel Jacob and Michel Boulou and Mario T. Furtado},
  year={1977}
}
Abstract The vapor-phase HCl/Ga/NH 3 method for deposition of GaN : Zn epilayers on sapphire substrates has been investigated to determine the dependence of epilayer resistivity, cathodoluminescence, and surface quality on the growth parameters. Both nucleation and control of the epilayer properties have been significantly improved by introducing HCl directly into the deposition zone in addition to the HCl that passes over the Ga source to produce GaCl. The effect of annealing on the stability… CONTINUE READING