Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3.

Abstract

We demonstrate a link between the growth process, the stoichiometry of LaAlO(3), and the interfacial electrical properties of LaAlO(3)/SrTiO(3) heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10(-3) Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance… (More)

Topics

  • Presentations referencing similar topics