Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy

@article{Brito2022EffectOG,
  title={Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy},
  author={Daniel Brito and Ana P{\'e}rez-Rodr{\'i}guez and Ishwor Khatri and Carlos Tavares and Mario Amado and Eduardo V Castro and Enrique Diez and Sascha Sadewasser and Marcel S. Claro},
  journal={Journal of Applied Physics},
  year={2022}
}
Topological insulators possess non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide (Bi2Se3) is one of the most promising topological insulators. However, a major drawback is its n-type nature arising from its natural doping, which makes the transport in the bulk dominant. This effect can be overcome by shifting the chemical potential into the bandgap, turning the transport of the surface states to be more… 

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TLDR
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