Kasjoo, and A ballistic rectifier,
- S.R.A.K. Singh
- IEEE Trans
In this paper, 2D computer simulations based on Silvaco TCAD (Atlas) have been employed to showcase the effect of different dielectric materials on the I-V characteristics of a novel nanoelectronic diode fabricated out of 2DEG materials such as GaN and InGaAs. Being a potential terahertz detector, it is further demonstrated that how these materials affect the parasitic and conductive properties of the devices at very high frequencies.