Effect of filling dielectric in etched trenches of novel unipolar nanodiode

Abstract

In this paper, 2D computer simulations based on Silvaco TCAD (Atlas) have been employed to showcase the effect of different dielectric materials on the I-V characteristics of a novel nanoelectronic diode fabricated out of 2DEG materials such as GaN and InGaAs. Being a potential terahertz detector, it is further demonstrated that how these materials affect the parasitic and conductive properties of the devices at very high frequencies.

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Cite this paper

@article{Garg2016EffectOF, title={Effect of filling dielectric in etched trenches of novel unipolar nanodiode}, author={Sudhi Ranjan Garg and Amod Garg and Suresh Kumar Bansal and Amardeep Chaudhary and A. K. Singh and S. R. Kasjoo}, journal={2016 International Conference on Microelectronics, Computing and Communications (MicroCom)}, year={2016}, pages={1-3} }