Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.

@article{Ozdemir2011EffectOE,
  title={Effect of electroless etching parameters on the growth and reflection properties of silicon nanowires.},
  author={Baris Ozdemir and Mustafa Kulakci and Rasit Turan and Husnu Emrah Unalan},
  journal={Nanotechnology},
  year={2011},
  volume={22 15},
  pages={155606}
}
Vertically aligned silicon nanowire (Si NW) arrays have been fabricated over large areas using an electroless etching (EE) method, which involves etching of silicon wafers in a silver nitrate and hydrofluoric acid based solution. A detailed parametric study determining the relationship between nanowire morphology and time, temperature, solution concentration and starting wafer characteristics (doping type, resistivity, crystallographic orientation) is presented. The as-fabricated Si NW arrays… CONTINUE READING

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