Effect of access region and field plate on capacitance behavior of GaN HEMT


Incorporation of Field Plate in High Electron Mobility Transistors (HEMTs) improves the device breakdown voltage but on the other hand, increases the device Capacitance. It has a direct impact on the device switching characteristics and hence the study of the capacitive behavior holds supreme importance for GaN HEMTs power switching application. Also, in… (More)


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