Effect of RF Plasma on Gridded Gate Pt/SiO2/Si MOS Sensor for Detection of Hydrogen

@article{Kumar2016EffectOR,
  title={Effect of RF Plasma on Gridded Gate Pt/SiO2/Si MOS Sensor for Detection of Hydrogen},
  author={Vinod Kumar and Sunny and V. N. Mishra and Ramashraya Dwivedi and R. R. Das},
  journal={IEEE Sensors Journal},
  year={2016},
  volume={16},
  pages={6205-6212}
}
The effect of RF oxygen plasma treatment on SiO2 surfaces has been investigated and compared with nonplasma treated sensors. Eight samples of thermally grown ~120Å SiO2 film are treated with a different RF O2 plasma power and time. All sensors have been tested for different concentrations of H2 at 25°C. It is observed that the sensitivity of sensors increases for high duration (8 min) of plasma exposure at 40-W RF plasma power. The sensors treated at 50-W RF plasma for 8- and 12-min duration… CONTINUE READING
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Referenced Papers

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Showing 1-10 of 40 references

Fabrication and characterization of gridded Pt/SiO2/Si MOS structure for hydrogen and hydrogen sulphide sensing

  • V. Kumar, I. R. Sunny, V. N. Mishra, R. Dwivedi, R. R. Das
  • Mater. Chem. Phys., vol. 146, no. 3, pp. 418–424…
  • 2014
6 Excerpts

Influence of gridded gate structure on gas sensing behavior of hydrogen

  • V. Kumar, V.N.M. Sunny, R. Dwivedi, R. R. Das
  • J. App. Phys., vol. 115, no. 20, p. 204514, 2014.
  • 2014
1 Excerpt

Effect of RF and microwave oxygen plasma on the performance of Pd gate MOS sensor for hydrogen

  • P. Pandey, J. K. Srivastava, V. N. Mishra, R. Dwivedi
  • Solid State Sci., vol. 12, no. 9, pp. 1540–1546…
  • 2010
4 Excerpts

Pd gate MOS sensor for hydrogen detection

  • P. Pandey, J. K. Srivastava, V. N. Mishra, R. Dwivedi
  • Solid State Sci., vol. 11, no. 8, pp. 1370–1374…
  • 2009
5 Excerpts

High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices

  • A. Trinchi, S. Kandasamy, W. Wlodarski
  • Sens. Actuators B, Chem., vol. 133, pp. 705–716…
  • 2008
2 Excerpts

New gas sensitive MIS structures Pt/Al2O3(M = Pt, Rh)/Si with a granular dielectric layer

  • A. Ryzhikov, F. Robaut, M. Labeau, A. Gaskov
  • Sens. Actuators B, Chem., vol. 133, no. 2, pp…
  • 2008

The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors

  • M. Eriksson, A. Salomonsson, I. Lundström, D. Briand, A. E. Åbom
  • J. Appl. Phys., vol. 98, no. 3, p. 034903, 2005.
  • 2005

A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor

  • K.-W. Lin
  • Semicond. Sci. Technol., vol. 18, no. 7, pp. 615…
  • 2003
1 Excerpt

ITO spin-coated porous silicon structures

  • K. Daoudi
  • Mater. Sci. Eng. B, vol. 101, pp. 262–265, Aug…
  • 2003
1 Excerpt

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