Effect of Physical Stress on the Degradation of Thin SiO 2 Films Under Electrical Stress

@inproceedings{Yang2000EffectOP,
  title={Effect of Physical Stress on the Degradation of Thin SiO 2 Films Under Electrical Stress},
  author={T. Yang and Krishna C. Saraswat},
  year={2000}
}
In this work, we demonstrate that for ultrathin MOS gate oxides, the reliability is closely related to the SiO2/Si interfacial physical stress for constant current gate injection ( ) in the Fowler–Nordheim tunneling regime. A physical stress-enhanced bond-breaking model is proposed to explain this. The oxide breakdown mechanism is very closely related to the Si–Si bond formation from the breakage of Si–O–Si bond, and that is influenced by the physical stress in the film. The interfacial stress… CONTINUE READING

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