Effect of Oxygen Pressure During Laser Deposition on Crystal Orientation in YBa2Cu3O7−δ Films

@inproceedings{Izumi1990EffectOO,
  title={Effect of Oxygen Pressure During Laser Deposition on Crystal Orientation in YBa2Cu3O7−δ Films},
  author={Hirohiko Izumi and Katsumi Ohata and Takashi Hase and Katsumi Suzuki and Tadataka Morishita},
  year={1990}
}
The effects of the oxygen partial pressure on the crystal orientation have been investigated for the YBa2Cu3O7−δ films deposited on SrTiO3 (100) at 700 °C with an ArF excimer laser. The films deposited in pressures of less than 10 mTorr have grown with the c-axis normal to substrate. By contrast, the films prepared in the pressure region between 20 mTorr and 1Torr have oriented the a-axis perpendicular to the film. The critical current density Jc of the c-axis- oriented film is large, 1.0* 105… CONTINUE READING