Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy

@article{Seredin2018EffectOM,
  title={Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy},
  author={Pavel Seredin and Dmitry Goloshchapov and Denis S. Zolotukhin and Aleksandr S. Lenshin and Alexander N. Lukin and Yu. Yu. Khudyakov and I. N. Arsentyev and A. V. Zhabotinsky and Dmitry N. Nikolaev and Nikita A. Pikhtin},
  journal={Semiconductors},
  year={2018},
  volume={52},
  pages={1012-1021}
}
It is shown for the first time that the structural and optical functional characteristics of integrated GaAs/Si(100) heterostructures can be controlled by using misoriented Si(100) substrates and their preliminary etching. The growth of an epitaxial GaAs layer on a Si substrate without the formation of antiphase domains can be carried out on a substrate deviated from the (100) singular plane by an angle smaller than 4°–6° or without a transition layer of GaAs nanocolumns. Preliminary treatment… CONTINUE READING