Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs

@article{Ioannidis2011EffectOL,
  title={Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs},
  author={Eleftherios G. Ioannidis and Andreas Tsormpatzoglou and D. H. Tassis and C. A. Dimitriadis and G{\'e}rard Ghibaudo and Jalal Jomaah},
  journal={IEEE Transactions on Electron Devices},
  year={2011},
  volume={58},
  pages={433-440}
}
An analytical threshold-voltage model of short-channel undoped symmetrical double-gate metal-oxide-semiconductor field-effect transistors including positive or negative interface charges near the drain is presented. The threshold-voltage model is derived based on an analytical solution for the potential distribution along the channel in the subthreshold region. Both potential and threshold-voltage models are compared with the Atlas simulation results, with variables being the device dimensions… CONTINUE READING

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