Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs

  title={Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs},
  author={Eleftherios G. Ioannidis and Andreas Tsormpatzoglou and D. H. Tassis and C. A. Dimitriadis and G{\'e}rard Ghibaudo and Jalal Jomaah},
  journal={IEEE Transactions on Electron Devices},
An analytical threshold-voltage model of short-channel undoped symmetrical double-gate metal-oxide-semiconductor field-effect transistors including positive or negative interface charges near the drain is presented. The threshold-voltage model is derived based on an analytical solution for the potential distribution along the channel in the subthreshold region. Both potential and threshold-voltage models are compared with the Atlas simulation results, with variables being the device dimensions… CONTINUE READING

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Publications referenced by this paper.
Showing 1-10 of 19 references

The threshold voltage model of MOSFET devices with localized interface charge

Y.-S. Jean, C.-Y. Wu
IEEE Trans. Electron Devices, vol. 44, no. 3, pp. 441–447, Mar. 1997. • 1997
View 14 Excerpts
Highly Influenced

Analytical modelling for the currentvoltage characteristics of undoped or lightly doped symmetric doublegate MOSFETs

A. Tsormpatzoglou, D. H. Tassis, +3 authors N. Collaert
Microelectron. Eng., vol. 87, no. 9, pp. 1764–1768, Nov. 2010. • 2010
View 1 Excerpt

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