Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs

@article{Kumar2017EffectOL,
  title={Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs},
  author={Pushpendra Kumar and Charles Leroux and Blend Mohamad and Alain Toffoli and Giovanni Romano and Xavier Garros and Gilles Reimbold and Florian Domengie and Carlos Suarez Segovia and G{\'e}rard Ghibaudo},
  journal={2017 IEEE International Reliability Physics Symposium (IRPS)},
  year={2017},
  pages={2B-2.1-2B-2.7}
}
In this paper, the Bias Temperature Instability effects of Lanthanum (La) and Aluminum (Al) incorporation, used for threshold voltage adjustment by dipole formation at the SiO2/HfON interface into the FDSOI gate dielectrics has been studied. When compared at the same oxide electric field (Eox), incorporation of La causes significant enhancement of intrinsic… CONTINUE READING