Effect of Ge Composition on Infrared Detecting Performance of Strain Si/${\rm Si}_{1-{\rm x}-{\rm y}}{\rm Ge}_{\rm x} {\rm C} _{\rm y}$ Heterojunction on Preferentially Etched Silicon Substrate


The p-strain Si/i- heterojunctions prepared by a rapid thermal chemical vapor deposition system on an n-Si substrate with back preferentially etched were developed for fast IR detecting applications. The stress induced by the p-strain Si/i- heterojunction enhanced the carrier mobility in p-Si layer, while the preferentially etching of n-Si substrate… (More)

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