Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

@inproceedings{Banadaki2016EffectOE,
  title={Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor},
  author={Yaser Mohammadi Banadaki and Ashok Srivastava},
  year={2016}
}
In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is… CONTINUE READING