Effect of Dielectric Variations on Performance of Carbon Nanotube Field Effect Transistor Based Basic Logic Gates

@article{Kaur2016EffectOD,
  title={Effect of Dielectric Variations on Performance of Carbon Nanotube Field Effect Transistor Based Basic Logic Gates},
  author={Ravneet Kaur and Gurmohan Singh and Manjit Kaur},
  journal={IOSR journal of VLSI and Signal Processing},
  year={2016},
  volume={06},
  pages={78-84}
}
The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor (SET) emerged as potential future replacement for CMOS transistors in digital circuits. CNFETs are… 

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