Effect of Dielectric Variations on Performance of Carbon Nanotube Field Effect Transistor Based Basic Logic Gates

  title={Effect of Dielectric Variations on Performance of Carbon Nanotube Field Effect Transistor Based Basic Logic Gates},
  author={Ravneet Kaur and Gurmohan Singh and Manjit Kaur},
  journal={IOSR journal of VLSI and Signal Processing},
The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor (SET) emerged as potential future replacement for CMOS transistors in digital circuits. CNFETs are… 

Figures and Tables from this paper

CNTFET for Logic Gates Design

The novel characteristics of CNTFET have eliminated many technological and fundamental hindrances being faced by CMOS transistors. CNTFET is emerging as prospective replacement for CMOS transistors

Performance Analysis of CNFET Based 6T SRAM

The computed results indicate that (22, 0) chirality based 6T SRAM cell yield the best performance from energy efficiency point (PDP) of view along with highest SNM/PDP ratio of 6.30mV/zJ.

True Three-Valued Ternary Content Addressable Memory Cell Based On Ambipolar Carbon Nanotube Transistors

Carbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between [Formula: see text]- and

Detection of Cotton Leaf Disease Using Image Processing Techniques

This work is an attempt to prepare a framework of plant disease diagnosis system by using the cotton plant leaves to help the farmer’s society to take effective measures to protect their crops from diseases.



Integrated Circuit Design Based on Carbon Nanotube Field Effect Transistor

As complementary metal-oxide semiconductor (CMOS) continues to scale down deeper into the nanoscale, various device non-idealities cause the I-V characteristics to be substantially different from

Performance analysis of CNTFET based digital logic circuits

Silicon technology continues to scale down and is a dominant choice for high-performance digital circuits. For enhancement of digital circuit performance researchers are further investigating other

Design of Basic Logic Gates Using Carbon Nano Tube Field Effect Transistor and Calculation of Figure of Merit

  • P. YeoleD. Padole
  • Engineering
    2015 7th International Conference on Emerging Trends in Engineering & Technology (ICETET)
  • 2015
Effective design of CNTFET based digital logic gates and associated with current CMOS technology is presented and the power consumption and total delay of basic logic gates is calculated by substituting theCNTFET instead of MOSFET.

Performance characteristics of a single walled Carbon Nanotube Field Effect Transistor (SWCNT-FET)

Intel's co-founder Gordon Moore hypothesized that the transistor number would double every couple of years. Hence device scaling became inevitable. But soon researchers realized that there is a limit

Effect of Device Parameters on Carbon Nanotube Field Effect Transistor in Nanometer Regime

In this paper, we have analyzed the effect of chiral vector, temperature, metal work function, channel length and High-K dielectric on threshold voltage of CNTFET devices. We have also compared the

Design of an efficient CNTFET using optimum number of CNT in channel region for logic gate implementation

After the invention of carbon nanotube field effect transistor (CNTFET) in 1998 it has attracted a number of research groups. It plays a great role in design of digital circuits to provide higher

Power consumption of logic circuits in ambipolar carbon nanotube technology

This paper characterize and study the power dissipation of generalized logic gates based on am-bipolar CNTFETs, and demonstrates that the energy-delay-product can be reduced by a factor of 20× using the ambipolarCNTFET technology.

Factors affecting performance of CNT FET as a switch in memory cell

  • Greeni NavinT. Basavaraj
  • Engineering
    International Conference on Advanced Nanomaterials & Emerging Engineering Technologies
  • 2013
As the world is on lookout for the smarter and faster and energy efficient technology, CNTFETs are considered as one of the emerging elements of nanotechnology for future logic applications, with

Comparative study of digital inverter for CNTFET & CMOS technologies

  • Raghav GuptaA. Rana
  • Engineering
    2013 Nirma University International Conference on Engineering (NUiCONE)
  • 2013
This paper presents a deeper insight into the present need of the Carbon Nano Tube Field Effect Transistor (CNTFET) by its comparison with conventional MOSFET for digital applications. Here,