Effect of Deposition Temperature on the Crystallization Mechanism of Amorphous Silicon Films on Glass

@inproceedings{Lee1997EffectOD,
  title={Effect of Deposition Temperature on the Crystallization Mechanism of Amorphous Silicon Films on Glass},
  author={Jeong No Lee and Bum Joo Lee and Dae Gyu Moon and Byung Tae Ahn},
  year={1997}
}
The crystallization mechanism of amorphous Si films deposited on glass substrates by plasma enhanced chemical vapor deposition method was investigated. The deposition temperature varied from 200 to 400° C and the films were crystallized at 600° C in nitrogen. As the deposition temperature increased the nucleation rate was increased, but the nucleation activation energy was independent of the deposition temperature with a value of 3.8 eV. The results suggest that the pre-exponential factor in… CONTINUE READING