Early stages of growth of Si nanowires by metal assisted chemical etching: A scaling study

@article{Pal2015EarlySO,
  title={Early stages of growth of Si nanowires by metal assisted chemical etching: A scaling study},
  author={Arindam Pal and Ramesh Ghosh and P. K. Giri},
  journal={Applied Physics Letters},
  year={2015},
  volume={107},
  pages={072104}
}
We have studied the kinetic roughening in the growth of Si nanowires (NWs) by metal assisted chemical etching (MACE) process as a function of the etching time using atomic force microscopy imaging. In the early stage of growth of Si NWs by Ag assisted MACE process, we have determined the scaling exponents α, β, and 1/z. In the formation of Si NWs, nascent Ag+ ions play an important role in diffusing through the Si surface by means of excess holes that control the size of the NWs. In this system… 

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