EUV pattern shift compensation strategies

@inproceedings{Schmoeller2008EUVPS,
  title={EUV pattern shift compensation strategies},
  author={T. Schmoeller and T. Klimpel and I. Kim and G. Lorusso and A. Myers and R. Jonckheere and A. Goethals and K. Ronse},
  booktitle={SPIE Advanced Lithography},
  year={2008}
}
EUV lithography is one of the hot candidates for the 22nm node. A well known phenomenon in EUV lithography is the impact of non-telecentricity and the mask topography on printing performance. Due to oblique illumination of the mask, layout, the printed features are shifted and biased on the wafer with respect to their target dimension up to several nanometers. This effect is inherent to EUV imaging systems. In order to maintain CDU, overlay and registration requirements, these effects need to… Expand
View on SPIE
25 Citations
Background Citations
8
Methods Citations
5

25 Citations

Citation Type

Citation Type

EUV-patterning characterization using a 3D mask simulation and field EUV scanner
  • 4
Shadowing effect modeling and compensation for EUV lithography
  • 20
Application of EUV resolution enhancement techniques (RET) to optimize and extend single exposure bi-directional patterning for 7nm and beyond logic designs
  • 15
The impact of mask design on EUV imaging
  • 9
Fully model-based methodology for simultaneous correction of extreme ultraviolet mask shadowing and proximity effects
  • 17
A fully model-based methodology for simultaneously correcting EUV mask shadowing and optical proximity effects with improved pattern transfer fidelity and process windows
  • 3
Comparative study of DRAM cell patterning between ArF immersion and EUV lithography
  • 10
3D mask effects of absorber geometry in EUV lithography systems
  • 2
Assessment of full-chip level EUV optical correction for sub-40nm memory device
  • 3
Impact of Process-Effect Correction Strategies on Variability of Critical Dimension and Electrical Characteristics in Extreme Ultraviolet Lithography
  • 3
...
1
2
3
...