EUV pattern shift compensation strategies

  title={EUV pattern shift compensation strategies},
  author={T. Schmoeller and T. Klimpel and I. Kim and G. Lorusso and A. Myers and R. Jonckheere and A. Goethals and K. Ronse},
  booktitle={SPIE Advanced Lithography},
EUV lithography is one of the hot candidates for the 22nm node. A well known phenomenon in EUV lithography is the impact of non-telecentricity and the mask topography on printing performance. Due to oblique illumination of the mask, layout, the printed features are shifted and biased on the wafer with respect to their target dimension up to several nanometers. This effect is inherent to EUV imaging systems. In order to maintain CDU, overlay and registration requirements, these effects need to… Expand
25 Citations
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