ESD reliability and protection schemes in SOI CMOS output buffers

@inproceedings{Chan1995ESDRA,
  title={ESD reliability and protection schemes in SOI CMOS output buffers},
  author={Mansun Chan and Selina S. Yuen and Zhi-jian Ma and Kelvin Y. Hui and Ping K. Ko and Chenming Calvin Hu},
  year={1995}
}
The electrostatic discharge (ESD) protection capability of SOI CMOS output buffers has been studied with Human Body Model (HBM) stresses. Experimental results show that the ESD voltage sustained by SOI CMOS buffers is only about half the voltage sustained by the bulk NMOS buffers. ESD discharge current in a SOI CMOS buffer is found to be absorbed by the NMOSFET alone. Also, SOI circuits display more serious reliability problem in handling negative ESD discharge current during bi-directional… CONTINUE READING

Citations

Publications citing this paper.
SHOWING 1-4 OF 4 CITATIONS

Impact of SOI Thickness on FUSI-Gate CESL CMOS Performance and Reliability

  • IEEE Transactions on Device and Materials Reliability
  • 2011
VIEW 1 EXCERPT
CITES BACKGROUND

Impact of Scaling on Thermal Behavior of Silicon-on-Insulator Transistors

  • Thermal and Thermomechanical Proceedings 10th Intersociety Conference on Phenomena in Electronics Systems, 2006. ITHERM 2006.
  • 2006
VIEW 1 EXCERPT
CITES BACKGROUND