ESD degradation analysis of poly-Si N-type TFT employing TLP (Transmission Line Pulser) test

@article{Jeon2002ESDDA,
  title={ESD degradation analysis of poly-Si N-type TFT employing TLP (Transmission Line Pulser) test},
  author={Byung-Chul Jeon and Kook-Chul Moon and Seung-Chul Lee and Min-Cheol Lee and Jae-Keun Oh and Min-Koo Han},
  journal={2002 Electrical Overstress/Electrostatic Discharge Symposium},
  year={2002},
  pages={194-199}
}
Degradation mechanisms of poly-Si N-type TFT due to ESD stress are reported employing TLP (Transmission Line Pulser) test. ESD pulse generated by TLP is applied on the drain and the gate of poly-Si TFT. Experimental results show that degradations caused by ESD stress on the drain are classified into three different failure modes depending on the strength of ESD stress; degradation regime, partial failure regime and complete failure regime. ESD stress on the gate results in the shift of the… CONTINUE READING
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