ESD Protection Circuit with Separated GGNMOS Segment for Input Protection

Abstract

An ESD protection circuit in chip level protection is proposed as the electrostatic discharge (ESD) clamping circuit such as thick field oxide (TFO), grounded gate MOS (GGNMOS) and separated segment for input protection. The ESD protection circuit for input protection was implemented from the proposed ESD protection circuit. The GGNMOS applied to separated… (More)

7 Figures and Tables

Cite this paper

@article{Hwang2005ESDPC, title={ESD Protection Circuit with Separated GGNMOS Segment for Input Protection}, author={Sang Joon Hwang and Chang Hun Lee and Min Chul Jung and Man Young Sung}, journal={2005 IEEE Conference on Electron Devices and Solid-State Circuits}, year={2005}, pages={511-514} }