EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY

@article{Rupprecht1967EFFICIENTVE,
  title={EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY},
  author={Hans S. Rupprecht and Jerry M. Woodall and George D. Pettit},
  journal={Applied Physics Letters},
  year={1967},
  volume={11},
  pages={81-83}
}
Efficient visible light emitting diodes have been fabricated from Ga1‐xAlxAs. Epitaxial layers were obtained by a modified solution growth technique. External quantum efficiencies of up to 3.3% have been measured at room temperature on diodes, which had their emission at 1.70 eV. The switching time for the light emission at 300°K was measured to be 60 nsec. 
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