ECR position etching for high selectivity and high-rate N+ poly-Si patterning

Abstract

A novel electron cyclotron resonance (ECR) plasma etching technology is described that produces simultaneously highly selective, high-rate, and anisotropic n+ poly-Si etching at a low acceleration voltage. ECR position etching for n+ poly-Si pattern fabrication is discussed. In this technology, a substrate is located at the ECR position in a plasma chamber… (More)

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