Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3.

  title={Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3.},
  author={Guo-Jiun Shu and Sz-Chian Liou and Sunil K. Karna and Raman Sankar and Michitoshi Hayashi and F. C. Chou},
  journal={arXiv: Materials Science},
Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelectric material of high thermoelectric figure-of-merit (ZT) and a topological insulator of Z2-type with a gapless surface band in Dirac cone shape. The existence of a conjugated pi-bond system on the surface of each Bi2Se3 quintuple layer is proposed based on an extended valence bond model having valence electrons… 
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