Dynamic-stress-induced dielectric breakdown in ultrathin nitride/oxide stacked films deposited on rugged polysilicon

Abstract

The dielectric breakdown characteristics of thin reoxidized Si/sub 3/N/sub 4/ films on both smooth and rugged poly-Si have been studied under dynamic stressing (unipolar and bipolar) with frequencies of up to 500 kHz. For capacitors with smooth poly-Si the time to breakdown (t/sub BD/) increases with frequency under unipolar stressing with positive gain… (More)

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Cite this paper

@article{Lo1992DynamicstressinducedDB, title={Dynamic-stress-induced dielectric breakdown in ultrathin nitride/oxide stacked films deposited on rugged polysilicon}, author={G. Q. Lo and D. Kwong and V. Mathews and P. Fazan and Akram Ditali}, journal={IEEE Electron Device Letters}, year={1992}, volume={13}, pages={183-185} }