Dynamic read destructive fault in embedded-SRAMs: analysis and march test solution

  title={Dynamic read destructive fault in embedded-SRAMs: analysis and march test solution},
  author={Luigi Dilillo and Patrick Girard and Serge Pravossoudovitch and Arnaud Virazel and Simone Borri and Magali Bastian},
  journal={Proceedings. Ninth IEEE European Test Symposium, 2004. ETS 2004.},
This paper presents an analysis of dynamic faults in core-cell of SRAM memories. These faults are the consequence of resistive-open defects that appear more frequently in VDSM technologies. In particular, the study concentrates on those defects that generate dynamic Read Destructive Faults, dRDFs. In this paper, we demonstrate that read or write operations on a cell involve a stress on the other cells of the same word line. This stress, called Read Equivalent Stress (RES), has the same effect… CONTINUE READING
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