Dynamic nuclear polarization and ESR hole burning in As doped silicon.

  title={Dynamic nuclear polarization and ESR hole burning in As doped silicon.},
  author={J. J{\"a}rvinen and Dimitar Zvezdov and J. Ahokas and S Sheludiakov and L Lehtonen and S. Vasiliev and Leonid S. Vlasenko and Yuya Ishikawa and Yutaka Fujii},
  journal={Physical chemistry chemical physics : PCCP},
We present an experimental study of the Dynamic Nuclear Polarization (DNP) of 29Si nuclei in silicon crystals of natural abundance doped with As in the temperature range 0.1-1 K and in a strong magnetic field of 4.6 T. This ensures a very high degree of electron spin polarization, extremely slow nuclear relaxation and optimal conditions for realization of Overhauser and resolved solid effects. We found that the solid effect DNP leads to the appearance of a pattern of holes and peaks in the ESR… 

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