Dynamic behaviors of semiconductor lasers under strong sinusoidal current modulation: modeling and experiments at 1.3 mu m

@inproceedings{Hemery1990DynamicBO,
  title={Dynamic behaviors of semiconductor lasers under strong sinusoidal current modulation: modeling and experiments at 1.3 mu m},
  author={Eric Hemery and Laurent Chusseau and J. M. Lourtioz},
  year={1990}
}
The theoretical analysis is based on rate equations including gain-compression effects. General criteria are established to predict the existence of irregular behaviors. Experiments are performed on a single-mode buried-heterostructure InGaAsP laser at 1.3 mu m. An original method is proposed to evaluate the parameters of the rate equations. Fully optical measurements are used. The nonlinear gain coefficient and the electrical response of the packaged laser are simultaneously determined from… CONTINUE READING

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