Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory

@article{Rajendran2009DynamicRM,
  title={Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory},
  author={Bahe Rajendran and Matthew J. Breitwisch and Ming-Hsiu Lee and G. W. Burr and Yen-Hao Shih and Roger Cheek and Alex Schrott and Chieh-Fang Chen and E. A. Joseph and R. Dasaka and H.-L. Lung and Chung Lam},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={126-129}
}
The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.