Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

@inproceedings{Gao2012DynamicPO,
  title={Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices},
  author={Shuang Gao and Cheng Song and Chao Chen and Fei Zeng and Feng Pan},
  year={2012}
}
Dynamic formation/rupture processes of metallic filament have been clarified in solid electrolyte- and oxide-based resistive memory devices, whereas they remain exclusive in organic ones. Here we report these dynamic processes in Cu/poly (3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester/indium–tin oxide (ITO) structure, which exhibits a typical bipolar resistive switching effect. Under illumination, an open circuit voltage of −0.15 V exists in high-resistance state, yet it vanishes… CONTINUE READING

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