Dynamic Analysis of a Si/SiGe-Based Impact Ionization Avalanche Transit Time Photodiode With an Ultrahigh Gain-Bandwidth Product

@article{Shi2009DynamicAO,
  title={Dynamic Analysis of a Si/SiGe-Based Impact Ionization Avalanche Transit Time Photodiode With an Ultrahigh Gain-Bandwidth Product},
  author={J. Shi and F. M. Kuo and F. Hong and Y. M. Wu},
  journal={IEEE Electron Device Letters},
  year={2009},
  volume={30},
  pages={1164-1166}
}
We investigate the dynamic performance of a Si/SiGe-based impact ionization avalanche transit time photodiode (PD) fabricated on a standard Si substrate that operates at the 830-nm wavelength. The bandwidth-enhancement effect under negative-photoconductance (NPC) operation can greatly relax the internal transit time as well as the tradeoff between the gain and bandwidth performance that characterizes the traditional avalanche PD. Our modeling and measurement results show that the extracted… CONTINUE READING

References

Publications referenced by this paper.
Showing 1-10 of 11 references

Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers,

  • W.-K. Huang, Y.-C. Liu, Y.-M. Hsin
  • Electron. Lett., vol. 44,
  • 2008
1 Excerpt

Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector,

  • G. Kim, I. G. Kim, J. H. Baek, O. K. Kwon
  • Appl. Phys. Lett., vol. 83,
  • 2003
1 Excerpt

Physics of Semiconductor Devices

  • S. M. Sze
  • New York: Wiley
  • 1981
2 Excerpts

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