Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit

@article{Lee2013DummyGN,
  title={Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit},
  author={Min Su Lee and Hee Chul Lee},
  journal={IEEE Transactions on Nuclear Science},
  year={2013},
  volume={60},
  pages={3084-3091}
}
A dummy gate-assisted n-type metal oxide semiconductor field effect transistor (DGA n-MOSFET) layout was evaluated to demonstrate its effectiveness at mitigating radiation-induced leakage currents in a conventional n-MOSFET. In the proposed DGA n-MOSFET layout, radiation-induced leakage currents are settled by isolating both the source and drain from the sidewall oxides using a p+ layer and dummy gates. Moreover, the dummy gates and dummy Metal-1 layers are expected to suppress the charge… CONTINUE READING

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