Dual workfunction fully silicided metal gates

Abstract

Fully silicided (FUSI), dual workfunction (WF), Ni monosilicide metal gates are demonstrated using Sb predoped polySi for setting the nFET WF and for the first time a combination of Al predoped polySi and a Ni(Pt) alloy silicide for the pFET WF. The combination of the Sb and Al predoped polySi along with the Ni(Pt)Si, allow for WFs spanning the Si band gap… (More)

3 Figures and Tables

Topics

  • Presentations referencing similar topics