Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs


We investigated bias temperature instability (BTI) and time dependent dielectric breakdown (TDDB) in TaCx/HfSiON MOSFETs in terms of the effects of TaCx metal gate electrode, using various Ta composition and TaCx thickness. We find a dual nature of TaCx metal gate electrode effects on the reliability. The gate electrode has both positive and negative… (More)

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