Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.
@article{Wang2012DualND,
title={Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals.},
author={Luyang Wang and Jie Lian and Pengzhen Cui and Yang Xu and Sohyeon Seo and Junghyun Lee and Yinthai Chan and Hyoyoung Lee},
journal={Chemical communications},
year={2012},
volume={48 34},
pages={
4052-4
}
}Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.
14 Citations
Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide
- Materials Science
- 2017
Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the…
Facile fabrication of flexible graphene FETs by sunlight reduction of graphene oxide.
- Materials ScienceOptics letters
- 2017
Since the reduced GO channel could be fabricated by sunlight treatment between two pre-patterned electrodes, the process features post-fabrication capability, which makes it possible to integrate graphene-based devices with given device structures.
Changes in major charge transport by molecular spatial orientation in graphene channel field effect transistors.
- Physics, ChemistryChemical communications
- 2013
Changes in major charge transport of graphene channel transistors in terms of the spatial orientation of adsorbed functional molecules were demonstrated, revealing the molecular orientation-dependent doping effects.
Graphene oxide-zinc oxide nanocomposite as channel layer for field effect transistors: effect of ZnO loading on field effect transport.
- Materials ScienceACS applied materials & interfaces
- 2014
From insulating GO to p- and then n-type, conductivity in GO could be achieved with reduction in the C-OH oxygen group by photocatalytic reduction of GO with varying degrees of ZnO.
Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate Electrostatic
- EngineeringIEEE Transactions on Electron Devices
- 2020
The current study concerns a technique to amplify the gas sensitivity of reduced graphene oxide (rGO)-field-effect transistor (FET) sensor for the detection of very low concentration gaseous species.…
p-TiO2/GO heterojunction based VOC sensors: A new approach to amplify sensitivity in FET structure at optimized gate voltage
- Engineering
- 2021
Near unity charge separation efficiency leads to pure ultraviolet emission in few layer graphene nanosheets.
- PhysicsNanotechnology
- 2019
The discovery of pure ultraviolet (UV) emission from few layer graphene nanosheets (GNS) is reported and a solar blind response device based on few layer GNS with a high on-off ratio was successfully fabricated.
Cu2ZnSnS4/MoS2-Reduced Graphene Oxide Heterostructure: Nanoscale Interfacial Contact and Enhanced Photocatalytic Hydrogen Generation
- Chemistry, EngineeringScientific reports
- 2017
A new heterostructure consisting of CZTS nanoparticles anchored onto a MoS2-reduced graphene oxide (rGO) hybrid showed much higher photocatalytic activity than both Au and Pt nanoparticle-decorated CZ TS (Au/C ZTS and Pt/CZTS) photocatalyses, indicating the MoS 2-rGO hybrid is a better co-catalyst for photoc atalytic hydrogen generation than the precious metal.
Low-dimensional carbon and MXene-based electrochemical capacitor electrodes.
- Materials ScienceNanotechnology
- 2016
Graphene, a single layer of sp(2)-bonded carbon atoms arrayed into two-dimensional carbon nanomaterial, has attracted wide interest as an electrode material for electrochemical capacitor applications due to its unique properties, including a high electrical conductivity and large surface area.
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