Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric

@article{Yeo2001DualmetalGC,
  title={Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric},
  author={Yee-Chia Yeo and Qiang Lu and Pushkar Ranade and Hiroshi Takeuchi and K. Yang and Igor Polishchuk and Tsu-Jae King and Chenming Hu and S. C. Song and H. Luan and Dim-Lee Kwong},
  journal={IEEE Electron Device Letters},
  year={2001},
  volume={22},
  pages={227-229}
}
We report the first demonstration of a dual-metal gate complementary metal oxide semiconductor (CMOS) technology using titanium (Ti) and molybdenum (Mo) as the gate electrodes for the N-metal oxide semiconductor field effect transistors (N-MOSFETs) and P-metal oxide semiconductor field effect transistors (P-MOSFETs), respectively. The gate dielectric stack consists of a silicon oxy-nitride interfacial layer and a silicon nitride (Si/sub 3/N/sub 4/) dielectric layer formed by a rapid-thermal… CONTINUE READING
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