Dual material gate-all-around Fully Depleted SOI MOSFET with Strained Si / Ge Channel

Abstract

After a lot of efforts to scale down the devices, now the scaling limits of device have reached i.e. it’s not possible to scale down the CMOS further. For further scaling of device we need to change the materials used for the gate and channel. In this paper different structures suggested by different authors are covered along with their benefits and… (More)

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