Dual gate black phosphorus velocity modulated transistor
@inproceedings{Tayari2015DualGB, title={Dual gate black phosphorus velocity modulated transistor}, author={Vahid Tayari and N. Hemsworth and Olivier Cyr-Choiniere and W. Harry Dickerson and Guillaume Gervais and Thomas Szkopek}, year={2015} }
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors [1–3]. Despite the susceptibility of black phosphorus to photo-oxidation [4], improvements to the electronic quality of black phosphorus devices has culminated in the observation of the quantum Hall effect [5]. In this work, we demonstrate the room temperature operation of a dual gated black phosphorus transistor operating…
3 Citations
Anomalous magneto-transport properties of bilayer phosphorene
- PhysicsScientific Reports
- 2020
The magneto-transport properties of phosphorene are investigated by employing the generalized tight-binding model to calculate the energy bands and the predicted results should be verifiable by magneto -transport measurements in a dual-gated system.
Experimental and molecular dynamics studies of an ultra-fast sequential hydrogen plasma process for fabricating phosphorene-based sensors
- Materials ScienceScientific reports
- 2021
Interestingly and according to the simulation results, there is a directional preference of crystal growth as the crystalline domains are being formed and RP atoms are more likely to re-locate in armchair than in zigzag direction.
References
SHOWING 1-10 OF 29 REFERENCES
Two-dimensional magnetotransport in a black phosphorus naked quantum well
- Physics, Materials ScienceNature communications
- 2015
This work fabricates bP-naked quantum wells in a back-gated field effect transistor geometry and demonstrates that 2D electronic structure and 2D atomic structure are independent, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.
Observation of tunable band gap and anisotropic Dirac semimetal state in black phosphorus
- PhysicsScience
- 2015
The realization of a widely tunable band gap in few-layer black phosphorus doped with potassium is reported, and it is demonstrated that a vertical electric field from dopants modulates the band gap, owing to the giant Stark effect, and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal.
Electric field effect in ultrathin black phosphorus
- Materials Science
- 2014
Black phosphorus exhibits a layered structure similar to graphene, allowing mechanical exfoliation of ultrathin single crystals. Here, we demonstrate few-layer black phosphorus field effect devices…
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
- EngineeringNature communications
- 2015
A simple modelling approach is proposed to quantitatively describe the transfer characteristics of Schottky barrier-MOSFETs from ultra-thin body materials accurately in the device off-state and successfully applied the approach to extract Schotky barrier heights for electrons and holes in black phosphorus devices for a large range of body thicknesses.
Dual Gate Black Phosphorus Field Effect Transistors on Glass for NOR Logic and Organic Light Emitting Diode Switching.
- EngineeringNano letters
- 2015
Dual gate BP FETs demonstrate organic light emitting diode (OLED) switching for green and blue OLEDs, also demonstrating NOR logic functions by separately using top- and bottom-input.
Quantum oscillations in a two-dimensional electron gas in black phosphorus thin films.
- PhysicsNature nanotechnology
- 2015
The results, coupled with the fact that black phosphorus possesses anisotropic energy bands with a tunable, direct bandgap, distinguish black phosphorus 2DEG as a system with unique electronic and optoelectronic properties.
Quantum Hall effect in biased black phosphorus
- Physics
- 2015
We study the quantum Hall effect of 2D electron gas in bilayer black phosphorus in the presence of perpendicular electric and magnetic fields. In the absence of a bias voltage, the external magnetic…
Gate bias symmetry dependency of electron mobility and prospect of velocity modulation in double-gate silicon-on-insulator transistors
- Physics
- 2004
We report on detailed room-temperature transport properties of a 17nm thick double-gate silicon-on-insulator (DGSOI) transistor. We find that when the electron gas is transferred between the top and…
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics.
- Materials ScienceNature communications
- 2014
Black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, is reintroduced to the layered-material family and shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.
Transport properties of a wide-quantum-well velocity modulation transistor structure
- Physics
- 1994
Results are presented on electron transport in a wide-quantum-well dual-channel velocity modulation transistor, where both front and back gates modulate the resistance through variation of the…