Dual-bit SONOS FinFET Non-Volatile Memory Cell and New Method of Charge Detection

@article{Padilla2007DualbitSF,
  title={Dual-bit SONOS FinFET Non-Volatile Memory Cell and New Method of Charge Detection},
  author={Alvaro Padilla and Tsu-Jae King Liu},
  journal={2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)},
  year={2007},
  pages={1-2}
}
A new charge detection method in which the off-state current is used to detect charge stored near to the drain is demonstrated for dual-bit SONOS FinFET NVM cells for the first time. This method is very sensitive to charge stored near to the drain electrode and thus can facilitate gate-length scaling of dual-bit SONOS NVM devices.