Dual Threshold Voltage Organic Thin-Film Transistor Technology

@article{Nausieda2010DualTV,
  title={Dual Threshold Voltage Organic Thin-Film Transistor Technology},
  author={Ivan Nausieda and Kyungsun Ryu and David Da He and A. I. Akinwande and Vladimir Bulovic and C. G. Sodini},
  journal={IEEE Transactions on Electron Devices},
  year={2010},
  volume={57},
  pages={3027-3032}
}
A fully photolithographic dual threshold voltage (VT) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated circuits is presented. The nearroom-temperature (<; 95 °C) process produces integrated dual VT pentacene-based p-channel transistors. The two VT 's are enabled by using two gate metals of low (aluminum) and high (platinum) work function. The Al and Pt gate OTFTs exhibit nominally identical current-voltage transfer curves shifted by an amount ΔVT. The… CONTINUE READING
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