Dual-Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part II: Impact of Gate-Dielectric Material Engineering

@article{Kasturi2008DualMaterialDG,
  title={Dual-Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part II: Impact of Gate-Dielectric Material Engineering},
  author={Poonam Kasturi and Manoj Saxena and Manish Gupta and R. S. Gupta},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={382-387}
}
Part I of this paper dealt with the simulation study, using ATLAS 2D, of analog-circuit performance metrics for the dual-material-gate (DMG) silicon-on-nothing (SON) MOSFET. It was reported that, out of the several combinations in the DMG design studied, the DMG device with LM1/ L ratio as 1/2 amalgamates the advantages of using a high metal work-function gate M1 and low metal work-function gate M2 in the most efficient manner. This paper focuses upon the effect of double-layer gate stack (DGS… CONTINUE READING

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