Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory

@inproceedings{Kim2018DualFO,
  title={Dual Functions of V/SiOx/AlOy/p++Si Device as Selector and Memory},
  author={Sungjun Kim and Cheng-Ming Lin and Min-Hwi Kim and Tae Hyo Kim and Hyungjin Kim and Ying-Chen Chen and Yao-Feng Chang and Byung-Gook Park},
  booktitle={Nanoscale Research Letters},
  year={2018}
}
This letter presents dual functions including selector and memory switching in a V/SiOx/AlOy/p++Si resistive memory device by simply controlling compliance current limit (CCL). Unidirectional threshold switching is observed after a positive forming with low CCL of 1 μA. The shifts to the V-electrode side of the oxygen form the VOx layer, where the threshold switching can be explained by the metal-insulation-transition phenomenon. For higher CCL (30 μA) applied to the device, a bipolar memory… CONTINUE READING

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