Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications

@inproceedings{Hashim2011DualFunctionalOA,
  title={Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications},
  author={Abdul Manaf Hashim and Farahiyah Mustafa and Shaharin Fadzli Abd Rahman and Abdul Rahim Abdul Rahman},
  booktitle={Sensors},
  year={2011}
}
A Schottky diode has been designed and fabricated on an n-AlGaAs/GaAs high-electron-mobility-transistor (HEMT) structure. Current-voltage (I-V) measurements show good device rectification, with a Schottky barrier height of 0.4349 eV for Ni/Au metallization. The differences between the Schottky barrier height and the theoretical value (1.443 eV) are due to the fabrication process and smaller contact area. The RF signals up to 1 GHz are rectified well by the fabricated Schottky diode and a stable… CONTINUE READING

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