Drive current boosting of n-type tunnel FET with strained SiGe layer at source

@article{Patel2008DriveCB,
  title={Drive current boosting of n-type tunnel FET with strained SiGe layer at source},
  author={Nayan Patel and A. Ramesha and Santanu Mahapatra},
  journal={Microelectronics Journal},
  year={2008},
  volume={39},
  pages={1671-1677}
}
Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60mV/decade subthreshold swing and very small OFF current (IOFF), its practical application is questionable due to low ON current (ION) and complicated fabrication process steps. In this paper, a new n-type classical-MOSFET-alike tunnel FET architecture is proposed, which offers sub-60mV/decade subthreshold swing along with a significant improvement in ION. The enhancement in ION is achieved by introducing a… CONTINUE READING
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