Drive-Current Enhancement in FinFETs Using Gate-Induced Stress

  title={Drive-Current Enhancement in FinFETs Using Gate-Induced Stress},
  author={K E Tan and T. Y. Liow and R. Lee and Chih-hang Tung and G. S. Samudra and Won-Jong Yoo and Yee-Chia Yeo},
  journal={IEEE Electron Device Letters},
A novel and simple process for the exploitation of metal-gate-induced stress in the Si channel region of a FinFET is reported. TaN metal-gate electrode was employed. The use of a silicon nitride capping layer, which covered the metal gate during the source and drain anneal, led to a large stress being developed as a result of the thermal-expansion… CONTINUE READING