Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping

@inproceedings{Nanjo2009DrivabilityEF,
  title={Drivability Enhancement for AlGaN/GaN High-Electron Mobility Transistors with AlN Spacer Layer Using Si Ion Implantation Doping},
  author={Takuma Nanjo and Muneyoshi Suita and Toshiyuki Oishi and Yuji Abe and Eiji Yagyu and Kiichi Yoshiara and Yasunori Tokuda},
  year={2009}
}
Although a thin AlN spacer layer between the AlGaN barrier and GaN channel layers effectively increases electron mobility and sheet carrier concentration in a two-dimensional electron gas, the very wide bandgap AlN makes ohmic contacts difficult to form. We overcame this problem using Si ion implantation to attain contact resistance below 2.5×10-6 Ω cm2. Samples without ion implantation had poor ohmic properties. Inserting the thin AlN spacer layer dramatically improved the drain current of… CONTINUE READING

Citations

Publications citing this paper.