Drift mobility of long-living excitons in coupled GaAs quantum wells

@inproceedings{Gartner2006DriftMO,
  title={Drift mobility of long-living excitons in coupled GaAs quantum wells},
  author={Andreas Gartner and Alexander W Holleitner and Dieter Schuh and J{\"o}rg P. Kotthaus},
  year={2006}
}
The authors report on high-mobility transport of indirect excitons in coupled GaAs quantum wells. A voltage-tunable in-plane potential gradient is defined for excitons by exploiting the quantum confined Stark effect in combination with a lithographically designed resistive top gate. Excitonic photoluminescence resolved in space, energy, and time provides insight into the in-plane drift dynamics. Across several hundreds of microns an excitonic mobility of 105cm2∕eVs is observed for temperatures… CONTINUE READING

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