Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]

@article{Luyken2003DrainLM,
  title={Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]},
  author={R. J. Luyken and Marion Specht and Willam Rosner and Joseph Hartwich and Franz Hofmann and L. Dreeskornfeld and Elma Landgraf and Thomas Schulz and M. Stadele and J M Kretz and Lothar Risch},
  journal={ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.},
  year={2003},
  pages={419-422}
}
The leakage mechanisms in fully depleted (FD) SOI transistors with undoped channel are investigated. These devices - contrary to partially depleted devices - show a strong V/sub DS/ dependence of the leakage currents. Energy balance simulations, including band to band tunneling effects and impact ionization, have been carried out. Contrary to drift… CONTINUE READING