Drain current modelling in silicon MOSFETs

Abstract

The present paper deals with the modeling of silicon MOSFET in the variety of channel range from submicron to nanoMOSFET aiming the study of the degradation and aging of MOSFET transistor used in VLSI Integrated circuits. The proposed model can be used for better understanding of the device reliability in the operating regions of interest. Moreover, it can… (More)

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