Drain-accelerated degradation of tunnel oxides in Flash memories

@article{Chimenton2002DrainacceleratedDO,
  title={Drain-accelerated degradation of tunnel oxides in Flash memories},
  author={Andrea Chimenton and A. S. Spinelli and Daniele Ielmini and A. L. Lacaita and Angelo Visconti and Piero Olivo},
  journal={Digest. International Electron Devices Meeting,},
  year={2002},
  pages={167-170}
}
A new technique for separating the oxide damage due to program/erase (P/E) cycling and of parasitic hot-hole injection due to bitline biasing in Flash memories is presented. The technique is based on an analysis of the spatial distribution of anomalous tail cells in the array subjected to P/E cycling. We show that electron and hole injection have different dependences on the number of P/E cycles, with the latter becoming the dominating mechanism for large cycling. 

Citations

Publications citing this paper.
Showing 1-10 of 12 extracted citations

References

Publications referenced by this paper.
Showing 1-7 of 7 references

Localization of SlLC in Flash memories after prograderase cycling

  • D. Ielmini, A. S. Spinelli, A. L. Lacaita, R. Leone, A. Visconti
  • Proc. IRPS,
  • 2002

A new reliabilitv model for oostI

  • H. P. Beleal et al
  • FLASH cycling”, Proc. IRPS,
  • 1993

Substrate injection induced program disturba new reliability consideration for FlashEPROM arrays ”

  • R. Kazerounian A. Roy, A. Kahlanian, B. Eitan
  • Proc . IRPS
  • 1992

Drain - avalanche induced hole injection and generation of interface traps in thin oxides MOS devices ”

  • P. Olivo
  • Proc . IRPS
  • 1990

Lucky - hole injection induced by bandtoband tunneling leakage in stacked gate transistors

  • S. Haddad R. Rakkhit, C. Chang, J. Yue
  • IEDM Tech . Dig .
  • 1990

Reliability performance of ETOX based Flash memories

  • G. Verma, N. Mielke
  • Proc. IRPS,
  • 1988

Similar Papers

Loading similar papers…